PART |
Description |
Maker |
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
PE7113 |
SMA FEMALE COAXIAL SWITHCH FREQUENCY RANGE: 1GHz 18GHz SWITCH TYPE: SPDT
|
Pasternack Enterprises, Inc...
|
PE6106 |
N MALE HIGH POWER TERMINATION FREQUENCY RANGE: DC TO 18GHz
|
Pasternack Enterprises, Inc.
|
MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 250 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
TPD03-06G18S |
5-18GHz 3-Way Power Divider
|
Transcom, Inc.
|
TPD02-01G18BS |
1-18GHz 2-Way Power Divider
|
Transcom, Inc.
|
PDW06089 |
6-18GHz 4-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
AS179-000 |
GaAs SPDT Switch 300 kHz-3 GHz Medium Power PHEMT GaAs IC High Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|